MAGNETIC PROPERTIES OF SOLID 3He WITH 4He IMPURITIES IN A HUBBARD-LIKE MODEL
نویسندگان
چکیده
A Hubbard-like Hamiltonian is used to study exchange-effects in solid 3He when a few 4He atoms are present as impurities. A canonical transformation has been performed to arrive at a Hamiltonian with terms that describe exchange between two 3He atoms, and a 3He atom and a 4He atom. In an attempt to see to what extent the magnetic properties of pure solid 3He remain unaltered, an analog of the Lieb-Mattis theorem concerning the ground state of the Hamiltonian has been proved, but only in the one-dimensional case. The three-bath model has been used to calculate the 4He concentration dependence of the relaxation times and the exchange-bath specific heat of impure bcc 3He.
منابع مشابه
Lattice Relaxation in Solid 4 He : Effect on Dynamics of 3
We present a new simplified derivation of the effect of lattice relaxation that accompanies the quantum tunneling of 3He impurities in solid 4He on the nuclear spin-lattice relaxation of the 3He impurities for very low impurity concentrations. As a result of the larger zero point motion of the 3He impurity compared to the 4He atoms, a significant lattice distortion accompanies the impurity as i...
متن کاملAcoustic Properties of Solid 4He in the Limit of Zero Impurity
We have studied the elasticity of solid 4He in relation with its possible supersolidity. For this we have measured acoustic resonance frequencies in a 1 cm3 cell filled either with polycrystals or with single crystals of 4He. We have observed a large stiffening at low temperature as first observed by Day and Beamish in polycrystals. The 3He impurity content has been varied from 300 ppb to 0.4 p...
متن کاملIs there a true supersolid phase transition ?
Six years have passed since Kim and Chan [1, 2] discovered supersolidity when they found that solid 4He does not rotate like a classical solid. Despite substantial effort, however, this phenomenon is not yet understood [3]. Some probably think that the research on this puzzling issue is too slow. Others, including myself, enjoy every new controversy and every new advance as if they were reading...
متن کاملImpurity Effects on the Growth Kinetics of 4He Crystals
We report the growth kinetics of the 4He crystals with a small amount of 3He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5ppm and lOppm 3He mixtures, it is found that ( I ) the relaxation process can be expressed as an exponential behavior, ( 2 ) the growth resistance becomes larger com...
متن کاملBound states of 3He at the edge of a 4He drop on a cesium surface.
We show that small amounts of 3He atoms, added to a 4He drop deposited on a flat cesium surface at zero temperature, populate bound states localized at the contact line. These edge states show up for drops large enough to develop well defined surface and bulk regions together with a contact line, and they are structurally different from the well-known Andreev states that appear at the free surf...
متن کامل